JMTJ100N02A Datasheet. Specs and Replacement

Type Designator: JMTJ100N02A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.9 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm

Package: SOT23

JMTJ100N02A substitution

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JMTJ100N02A datasheet

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JMTJ100N02A

JMTJ100N02A Description JMT N-channel Enhancement Mode Power MosFET Features Applications 20V, 8A Load Switch RDS(ON) ... See More ⇒

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JMTJ100N02A

100V, 3A, 95m N-channel Power Trench MOSFET JMTJ11DN10A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit Halogen-free; RoHS-compliant VDSS 100 V Pb-free plating VGS(th)_Typ 1.6 V ID(@VGS=10V) 3 A Applications RDS(ON)_Typ(@VGS=10V 86 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 95 mW PWM Application Power Management D1 G1 S... See More ⇒

Detailed specifications: JMTP4435A, JMTP4953A, JMTP4953B, JMTP520P04A, JMTP850P04A, JMTP9435A, JMTP9926A, JMTP9926B, AO4407A, JMTJ11DN10A, JMTJ210P02A, JMTJ2302C, JMTJ2333A, JMTJ250P02A, JMTJ3400A, JMTJ3401A, JMTJ3401B

Keywords - JMTJ100N02A MOSFET specs

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