JMTP170N06D Datasheet. Specs and Replacement

Type Designator: JMTP170N06D

Marking Code: 170N06D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V

Qg ⓘ - Total Gate Charge: 50 nC

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0204 Ohm

Package: SOP8

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JMTP170N06D datasheet

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JMTP170N06D

60V, 9.2A, 18m N-channel Power Trench MOSFET JMTP170N06D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V Halogen-free; RoHS-compliant VGS(th)_Typ 1.6 V Pb-free plating ID(@VGS=10V) 9.2 A RDS(ON)_Typ(@VGS=10V 16.7 mW Applications RDS(ON)_Typ(@VGS=4.5V 18.3 mW Load Switch PWM Application ... See More ⇒

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JMTP170N06D

JMTP170N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 10A Load Switch R ... See More ⇒

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JMTP170N06D

JMTP170C04D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 40V, 10A Battery Protection R ... See More ⇒

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JMTP170N06D

-30V, -11A, 16m P-channel Power Trench MOSFET JMTP160P03D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V Halogen-free; RoHS-compliant VGS(th)_Typ -1.7 V Pb-free plating ID(@VGS=10V) -11 A RDS(ON)_Typ(@VGS=-10V 12 mW Applications RDS(ON)_Typ(@VGS=-4.5V 16 mW Load Switch PWM Application ... See More ⇒

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Detailed specifications: JMTL3134KT5, JMTL3134KT7, JMTP120C03D, JMTP130N04A, JMTP130P04A, JMTP160P03D, JMTP170C04D, JMTP170N06A, IRF630, JMTP230C04D, JMTP240C03D, JMTP240N03D, JMTP250P03A, JMTP260N03D, JMTP3008A, JMTP3010D, JMTP330N06D

Keywords - JMTP170N06D MOSFET specs

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