JMTP170N06D - Даташиты. Аналоги. Основные параметры

60V, 9.2A, 18m N-channel Power Trench MOSFETJMTP170N06DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V Halogen-free; RoHS-compliantVGS(th)_Typ 1.6 V Pb-free platingID(@VGS=10V) 9.2 ARDS(ON)_Typ(@VGS=10V 16.7 mWApplications RDS(ON)_Typ(@VGS=4.5V 18.3 mW Load Switch PWM Application

JMTP170N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 10A Load SwitchR

JMTP170C04DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 40V, 10A Battery ProtectionR

-30V, -11A, 16m P-channel Power Trench MOSFETJMTP160P03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V Halogen-free; RoHS-compliantVGS(th)_Typ -1.7 V Pb-free platingID(@VGS=10V) -11 ARDS(ON)_Typ(@VGS=-10V 12 mWApplications RDS(ON)_Typ(@VGS=-4.5V 16 mW Load Switch PWM Application

JMTP110N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,12A Load Switch R

JMTP130N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 10A Load SwitchRDS(ON)

JMTP120C03DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 30V, 10A Battery ProtectionR

JMTP11DN10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V, 3A Load Switch R

JMTP130P04ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -40V, I = -12A PWM ApplicationsDS DR

60V, 11A, 13.4m N-channel Power Trench MOSFETJMTP110N06DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 11 A Pb-free platingRDS(ON)_Typ(@VGS=10V 12.5 mWRDS(ON)_Typ(@VGS=4.5V 13.4 mWApplications Load Switch