JMTP3010D Datasheet and Replacement
Type Designator: JMTP3010D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 131 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0116 Ohm
Package: SOP8
JMTP3010D substitution
JMTP3010D Datasheet (PDF)
jmtp3010d.pdf

JMTP3010DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 12A Load SwitchRDS(ON)
jmtp3008a.pdf

JMTP3008ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 15A Load SwitchRDS(ON)
jmtp380n03d.pdf

JMTP380N03DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Application 30V, 4.5A Load SwitchR
jmtp330n06d.pdf

60V, 5A, 32m N-channel Power Trench MOSFETJMTP330N06DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V Halogen-free; RoHS-compliantVGS(th)_Typ 1.6 V Pb-free platingID(@VGS=10V) 5 ARDS(ON)_Typ(@VGS=10V 28 mWApplications RDS(ON)_Typ(@VGS=4.5V 32 mW Load Switch PWM Application Power Ma
Datasheet: JMTP170N06A , JMTP170N06D , JMTP230C04D , JMTP240C03D , JMTP240N03D , JMTP250P03A , JMTP260N03D , JMTP3008A , IRF4905 , JMTP330N06D , JMSL0601AG , JMSL0601AGQ , JMSL0601BG , JMSL0601BGQ , JMSL0601TG , JMSL0602AG , JMSL0602AGQ .
History: DM4N65E | TMP11N50SG | SI9424DY | FDM80R120AN4G | SIHB10N40D | TMP4N60 | AOT4N60
Keywords - JMTP3010D MOSFET datasheet
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History: DM4N65E | TMP11N50SG | SI9424DY | FDM80R120AN4G | SIHB10N40D | TMP4N60 | AOT4N60



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