All MOSFET. JMTC58N06B Datasheet

 

JMTC58N06B Datasheet and Replacement


   Type Designator: JMTC58N06B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 186 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
   Package: TO220
 

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JMTC58N06B Datasheet (PDF)

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JMTC58N06B

60V, 58A, 8.3m N-channel Power Trench MOSFETJMTC58N06BProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 58 A Pb-free plating RDS(ON)_Typ(@VGS=10V 8.3 mWApplications Load Switch PWM Application Power Manage

Datasheet: JMTC085P04A , JMTC110N06A , JMTC170N10A , JMTC3002B , JMTC3003A , JMTC3005A , JMTC320N10A , JMTC4004A , SKD502T , JMTC60N04B , JMTC6888A , JMTC80N06A , , , , , .

History: IXFH18N60X

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