JMTC58N06B Datasheet. Specs and Replacement

Type Designator: JMTC58N06B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 215 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 186 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm

Package: TO220

JMTC58N06B substitution

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JMTC58N06B datasheet

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JMTC58N06B

60V, 58A, 8.3m N-channel Power Trench MOSFET JMTC58N06B Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 58 A Pb-free plating RDS(ON)_Typ(@VGS=10V 8.3 mW Applications Load Switch PWM Application Power Manage... See More ⇒

Detailed specifications: JMTC085P04A, JMTC110N06A, JMTC170N10A, JMTC3002B, JMTC3003A, JMTC3005A, JMTC320N10A, JMTC4004A, RFP50N06, JMTC60N04B, JMTC6888A, JMTC80N06A, JMTL3400A, JMTL3400L, JMTL3401B, JMTL3402A, JMTL3404A

Keywords - JMTC58N06B MOSFET specs

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