JMTC6888A Datasheet and Replacement
Type Designator: JMTC6888A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 213 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
Package: TO220
JMTC6888A substitution
JMTC6888A Datasheet (PDF)
jmtc6888a.pdf
68V, 80A, 7.2m N-channel Power Trench MOSFETJMTC6888AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 68 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 80 ARDS(ON)_Typ(@VGS=10V 7.2 mWApplications Load Switch PWM Application Power ManagementDG STO-22
jmtc60n04b.pdf
JMTC60N04B Description JMT N-channel Enhancement Mode Power MOSFET Features Application 40V,60A Load Switch R
Datasheet: JMTC170N10A , JMTC3002B , JMTC3003A , JMTC3005A , JMTC320N10A , JMTC4004A , JMTC58N06B , JMTC60N04B , 4N60 , JMTC80N06A , JMTL3400A , JMTL3400L , JMTL3401B , JMTL3402A , JMTL3404A , JMTL3404B , JMTL3406A .
History: RU40220R | JFAM24N50C | TK100E10N1 | AS2102W
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History: RU40220R | JFAM24N50C | TK100E10N1 | AS2102W
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