JMTL850P04A Datasheet. Specs and Replacement

Type Designator: JMTL850P04A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm

Package: SOT23

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JMTL850P04A datasheet

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JMTL850P04A

-40V, -2.8A, 74m P-channel Power Trench MOSFET JMTL850P04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit Halogen-free; RoHS-compliant VDSS -40 V Pb-free plating VGS(th)_Typ -1.6 V ID(@VGS=-10V) -2.8 A Applications RDS(ON)_Typ(@VGS=-10V 61 mW Load Switch RDS(ON)_Typ(@VGS=-4.5V 74 mW PWM Application Power Management ... See More ⇒

Detailed specifications: JMTL3404A, JMTL3404B, JMTL3406A, JMTL3407A, JMTL3415KL, JMTL3416KS, JMTL3N10A, JMTL400N04A, IRF1405, JMTLA2N7002KS, JMTLA3134K, JMTQ250C03D, JMTQ3003A, JMTQ3005A, JMTQ3005C, JMTQ3006B, JMTQ3006C

Keywords - JMTL850P04A MOSFET specs

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