All MOSFET. JMTL850P04A Datasheet

 

JMTL850P04A Datasheet and Replacement


   Type Designator: JMTL850P04A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: SOT23
 

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JMTL850P04A Datasheet (PDF)

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JMTL850P04A

-40V, -2.8A, 74m P-channel Power Trench MOSFETJMTL850P04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit Halogen-free; RoHS-compliantVDSS -40 V Pb-free platingVGS(th)_Typ -1.6 VID(@VGS=-10V) -2.8 AApplicationsRDS(ON)_Typ(@VGS=-10V 61 mW Load Switch RDS(ON)_Typ(@VGS=-4.5V 74 mW PWM Application Power Management

Datasheet: JMTL3404A , JMTL3404B , JMTL3406A , JMTL3407A , JMTL3415KL , JMTL3416KS , JMTL3N10A , JMTL400N04A , IRF1405 , JMTLA2N7002KS , JMTLA3134K , JMTQ250C03D , JMTQ3003A , JMTQ3005A , JMTQ3005C , JMTQ3006B , JMTQ3006C .

History: STI42N65M5 | STI26NM60N | DMP3017SFGQ | STS65R580DS2TR | BSC042N03MS | STS65R280DS2TR

Keywords - JMTL850P04A MOSFET datasheet

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