JMTQ320N10A Datasheet. Specs and Replacement
Type Designator: JMTQ320N10A
Marking Code: Q320N10A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 29.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
Qg ⓘ - Total Gate Charge: 72 nC
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: PDFN3X3-8L
JMTQ320N10A substitution
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JMTQ320N10A datasheet
jmtq320n10a.pdf
100V, 23A, 24.4m N-channel Power Trench MOSFET JMTQ320N10A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 23 A RDS(ON)_Typ(@VGS=10V 22.5 mW Pb-free plating RDS(ON)_Typ(@VGS=4.5V 24.4 mW Applications Load Switch ... See More ⇒
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Detailed specifications: JMTQ250C03D, JMTQ3003A, JMTQ3005A, JMTQ3005C, JMTQ3006B, JMTQ3006C, JMTQ3008A, JMTQ3010D, RU7088R, JMTQ3400D, JMTQ380C03D, JMTQ4407A, JMTQ440P04A, JMTQ60N04B, JMTQ90N02A, JMSL0403AG, JMSL0403AGQ
Keywords - JMTQ320N10A MOSFET specs
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