All MOSFET. JMTQ320N10A Datasheet

 

JMTQ320N10A Datasheet and Replacement


   Type Designator: JMTQ320N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: PDFN3X3-8L
 

 JMTQ320N10A substitution

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JMTQ320N10A Datasheet (PDF)

 ..1. Size:1238K  jiejie micro
 jmtq320n10a.pdf pdf_icon

JMTQ320N10A

100V, 23A, 24.4m N-channel Power Trench MOSFETJMTQ320N10AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 23 ARDS(ON)_Typ(@VGS=10V 22.5 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 24.4 mWApplications Load Switch

 9.1. Size:627K  1
 jmtq35n06a.pdf pdf_icon

JMTQ320N10A

JMTQ35N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,35A Load Switch R

 9.2. Size:1288K  jiejie micro
 jmtq35n06a.pdf pdf_icon

JMTQ320N10A

60V, 35A, 14.3m N-channel Power Trench MOSFETJMTQ35N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 35 A Pb-free platingRDS(ON)_Typ(@VGS=10V 12.0 mWRDS(ON)_Typ(@VGS=4.5V 14.3 mWApplications Load Switch

 9.3. Size:628K  jiejie micro
 jmtq3010d.pdf pdf_icon

JMTQ320N10A

JMTQ3010DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 22A Load SwitchRDS(ON)

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Datasheet: JMTQ250C03D , JMTQ3003A , JMTQ3005A , JMTQ3005C , JMTQ3006B , JMTQ3006C , JMTQ3008A , JMTQ3010D , MMD60R360PRH , JMTQ3400D , JMTQ380C03D , JMTQ4407A , JMTQ440P04A , JMTQ60N04B , JMTQ90N02A , , .

Keywords - JMTQ320N10A MOSFET datasheet

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