All MOSFET. JMSL0406AGDQ Datasheet

 

JMSL0406AGDQ Datasheet and Replacement


   Type Designator: JMSL0406AGDQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 526 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
   Package: PDFN5X6-8L-D
 

 JMSL0406AGDQ substitution

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JMSL0406AGDQ Datasheet (PDF)

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JMSL0406AGDQ

JMSL0406AGDQ40V 5.5mW Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 49 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.5 mW RDS(ON)_Typ (@ VGS = 4.5V)7.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qu

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JMSL0406AGDQ

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JMSL0406AGDQ

JMSL0406AG40V 4.2m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)1.7 V High Current Capability ID (@ VGS = 10V) (1) 70 A 100% UIS Tested, 100% Rg Tested RDS(ON) (@ VGS = 10V)4.2 mApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC/DC

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JMSL0406AGDQ

JMSL0406AGQ40V 4.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.2 m RDS(ON)_Typ (@ VGS = 4.5V)5.8 m Halogen-free and RoHS-compliant AEC-Q101 Qu

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Datasheet: JMSL0403PG , JMSL0403PGQ , JMSL0403PK , JMSL0403PU , JMSL04055GQ , JMSL04055UQ , JMSL04060GDQ , JMSL0406AGD , IRFZ44 , JMSL0406AGQ , JMSL0406AK , JMSL0406AKQ , JMSL1010AC , JMSL1010AG , JMSL1010AGQ , JMSL1010AK , JMSL1010AKQ .

Keywords - JMSL0406AGDQ MOSFET datasheet

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