JMSL0406AGDQ - параметры транзистора MOSFET, его аналоги, datasheet

JMSL0406AGDQ Datasheet (PDF)

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JMSL0406AGDQ40V 5.5mW Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 49 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.5 mW RDS(ON)_Typ (@ VGS = 4.5V)7.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qu

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JMSL0406AG40V 4.2m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)1.7 V High Current Capability ID (@ VGS = 10V) (1) 70 A 100% UIS Tested, 100% Rg Tested RDS(ON) (@ VGS = 10V)4.2 mApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC/DC

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JMSL0406AGQ40V 4.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.2 m RDS(ON)_Typ (@ VGS = 4.5V)5.8 m Halogen-free and RoHS-compliant AEC-Q101 Qu