JMTE6888A Datasheet. Specs and Replacement

Type Designator: JMTE6888A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 103 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 267 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO263

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JMTE6888A datasheet

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JMTE6888A

JMTE6888A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 68V, 80A Load Switch R ... See More ⇒

Detailed specifications: JMTE018N03A, JMTE025N04D, JMTE035N04A, JMTE035N06D, JMTE060N06A, JMTE068N07A, JMTE3002B, JMTE3003A, 5N65, JMTK110N06A, JMTK120N03A, JMTK130P04A, JMTK1404A1, JMTK160P03A, JMTK170N10A, JMTK2006A, JMTK2007A

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