JMTK160P03A Datasheet: MOSFET, P-Ch, 30V, 39A. Full specification with pinout and replacement list

JMTK160P03A Datasheet. Specs and Replacement

Type Designator: JMTK160P03A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.6 nS

Cossⓘ - Output Capacitance: 248 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO252

JMTK160P03A substitution

- MOSFET ⓘ Cross-Reference Search

JMTK160P03A datasheet

..1. Size:1326K jiejie micro
jmtk160p03a.pdf pdf_icon

-30V, -39A, 13.7m P-channel Power Trench MOSFET JMTK160P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -39 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 9.6 mW RDS(ON)_Typ(@VGS=-4.5V 13.7 mW Applications Load Sw... See More ⇒

9.1. Size:1068K jiejie micro
jmtk100n02a.pdf pdf_icon

JMTK100N02A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 30A Load Switch RDS(ON) ... See More ⇒

9.2. Size:1298K jiejie micro
jmtk110n06a.pdf pdf_icon

60V, 55A, 8m N-channel Power Trench MOSFET JMTK110N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A RDS(ON)_Typ(@VGS=10V 8 mW Applications Load Switch PWM Application Power Management D G S TO-252... See More ⇒

9.3. Size:879K jiejie micro
jmtk120n03a.pdf pdf_icon