JMTK160P03A Datasheet and Replacement
Type Designator: JMTK160P03A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 39 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.6 nS
Cossⓘ - Output Capacitance: 248 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO252
JMTK160P03A substitution
JMTK160P03A Datasheet (PDF)
jmtk160p03a.pdf

-30V, -39A, 13.7m P-channel Power Trench MOSFETJMTK160P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V 100% Vds TestedVGS(th)_Typ -1.6 V Halogen-free; RoHS-compliantID(@VGS=-10V) -39 A Pb-free platingRDS(ON)_Typ(@VGS=-10V 9.6 mWRDS(ON)_Typ(@VGS=-4.5V 13.7 mWApplications Load Sw
jmtk100n02a.pdf

JMTK100N02ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 20V, 30A Load SwitchRDS(ON)
jmtk110n06a.pdf

60V, 55A, 8m N-channel Power Trench MOSFETJMTK110N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 55 ARDS(ON)_Typ(@VGS=10V 8 mWApplications Load Switch PWM Application Power ManagementDG STO-252
jmtk120n03a.pdf

JMTK120N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 20A Load SwitchRDS(ON)
Datasheet: JMTE068N07A , JMTE3002B , JMTE3003A , JMTE6888A , JMTK110N06A , JMTK120N03A , JMTK130P04A , JMTK1404A1 , IRLB4132 , JMTK170N10A , JMTK2006A , JMTK2007A , JMTK290N06A , JMTK3002B , JMTK3003A , JMTK3004A , JMTK3005A .
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