JMTLB2N7002KDS Datasheet and Replacement
Type Designator: JMTLB2N7002KDS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: SOT363
JMTLB2N7002KDS substitution
JMTLB2N7002KDS Datasheet (PDF)
jmtlb2n7002kds.pdf

JMTLB2N7002KDSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.2A Battery Operated SystemsDS DR
jmtlb3134k.pdf

JMTLB3134KDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 20V, 0.9A Load SwitchR
Datasheet: JMTK290N06A , JMTK3002B , JMTK3003A , JMTK3004A , JMTK3005A , JMTK3005B , JMTK3005C , JMTK3005L , STP80NF70 , JMTLB3134K , JMTM170N04A , JMTM2310A , JMTM300C02D , JMTM300N03D , JMTM330N06A , JMTM3406D , JMTM3415KL .
History: JMTM8205B | JMTM170N04A
Keywords - JMTLB2N7002KDS MOSFET datasheet
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History: JMTM8205B | JMTM170N04A



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