JMTLB2N7002KDS Datasheet and Replacement
Type Designator: JMTLB2N7002KDS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: SOT363
JMTLB2N7002KDS substitution
JMTLB2N7002KDS Datasheet (PDF)
..1. Size:327K jiejie micro
jmtlb2n7002kds.pdf
jmtlb2n7002kds.pdf
JMTLB2N7002KDSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.2A Battery Operated SystemsDS DR
9.1. Size:347K jiejie micro
jmtlb3134k.pdf
jmtlb3134k.pdf
JMTLB3134KDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 20V, 0.9A Load SwitchR
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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