All MOSFET. JMTM850P04A Datasheet

 

JMTM850P04A Datasheet and Replacement


   Type Designator: JMTM850P04A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT23-6L
 

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JMTM850P04A Datasheet (PDF)

 ..1. Size:477K  jiejie micro
 jmtm850p04a.pdf pdf_icon

JMTM850P04A

JMTM850P04ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -40V, I = -5A PWM ApplicationsDS DR

 9.1. Size:986K  jiejie micro
 jmtm8205a.pdf pdf_icon

JMTM850P04A

JMTM8205ADescriptionJMT Dual N-channel Enhancement Mode Power MosFETFeatures Applicatiol 19.5V, 5A l Load Switch RDS(ON)

 9.2. Size:975K  jiejie micro
 jmtm8205b.pdf pdf_icon

JMTM850P04A

JMTM8205BDescriptionJMT Dual N-channel Enhancement Mode Power MosFETFeatures Applicatio 20V, 6A Load SwitchRDS(ON)

 9.3. Size:331K  jiejie micro
 jmtm8810ks.pdf pdf_icon

JMTM850P04A

JMTM8810KSDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 20V, 4.8A Load SwitchR

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Datasheet: JMTM2310A , JMTM300C02D , JMTM300N03D , JMTM330N06A , JMTM3406D , JMTM3415KL , JMTM8205A , JMTM8205B , IRF830 , JMTM8810KS , JMTN11DN10A , JMTN2310A , JMTN330N06A , , , , .

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