JMTN11DN10A Datasheet. Specs and Replacement

Type Designator: JMTN11DN10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: SOT89

JMTN11DN10A substitution

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JMTN11DN10A datasheet

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JMTN11DN10A

JMTN11DN10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V, 3A Load Switch R ... See More ⇒

Detailed specifications: JMTM300N03D, JMTM330N06A, JMTM3406D, JMTM3415KL, JMTM8205A, JMTM8205B, JMTM850P04A, JMTM8810KS, P60NF06, JMTN2310A, JMTN330N06A, JMTQ11DP03A, JMTQ120C03D, JMTQ120N03A, JMTQ120N03D, JMTQ120N04D, JMTQ130N04D

Keywords - JMTN11DN10A MOSFET specs

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