JMTQ120N03D Datasheet. Specs and Replacement

Type Designator: JMTQ120N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0143 Ohm

Package: PDFN3X3-8L-D

JMTQ120N03D substitution

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JMTQ120N03D datasheet

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JMTQ120N03D

JMTQ120N03D Description JMT N-channel Enhancement Mode Power MOSFET Features Applications Load Switch 30V, 15A PWM Application RDS(ON) ... See More ⇒

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JMTQ120N03D

JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 18A Load Switch RDS(ON) ... See More ⇒

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JMTQ120N03D

40V, 29A, 15m N-channel Power Trench MOSFET JMTQ120N04D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 29 A Pb-free plating RDS(ON)_Typ(@VGS=10V 14 mW RDS(ON)_Typ(@VGS=4.5V 15 mW Applications Load Switch PWM... See More ⇒

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JMTQ120N03D

JMTQ120C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 30V, 11A Battery Protection R ... See More ⇒

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Detailed specifications: JMTM850P04A, JMTM8810KS, JMTN11DN10A, JMTN2310A, JMTN330N06A, JMTQ11DP03A, JMTQ120C03D, JMTQ120N03A, 7N60, JMTQ120N04D, JMTQ130N04D, JMTQ130P04A, JMTQ160P03A, JMTQ170C04D, JMTQ190N03A, JMTQ200P03A, JMTQ220N04D

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