JMTQ200P03A Datasheet. Specs and Replacement

Type Designator: JMTQ200P03A

Marking Code: Q200P03A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 23 nC

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0174 Ohm

Package: PDFN3X3-8L

JMTQ200P03A substitution

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JMTQ200P03A datasheet

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JMTQ200P03A

JMTQ200P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -12A Load Switch RDS(ON) ... See More ⇒

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JMTQ200P03A

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JMTQ200P03A

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JMTQ250C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 30V, 9A Battery Protection R ... See More ⇒

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Detailed specifications: JMTQ120N03A, JMTQ120N03D, JMTQ120N04D, JMTQ130N04D, JMTQ130P04A, JMTQ160P03A, JMTQ170C04D, JMTQ190N03A, AON7403, JMTQ220N04D, JMTQ230N04D, JMTQ240C03D, JMTQ240N03A, JMTQ240N03D, JMSL0406AP, JMSL0406AU, JMSL0406AUQ

Keywords - JMTQ200P03A MOSFET specs

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