JMTI080N02A Datasheet and Replacement
Type Designator: JMTI080N02A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 228 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO251
JMTI080N02A substitution
JMTI080N02A Datasheet (PDF)
jmti080n02a.pdf

JMTI080N02ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 20V, 50A Load SwitchRDS(ON)
jmti080p03a.pdf

JMTI080P03A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -30V, I = -60A PWM Applications DS DR
Datasheet: JMSL040SAGQ , JMSL040SMTL , JMSL040SPG , JMSL0605AGD , JMSL0605AGDQ , JMSL0605PG , JMSL0606AC , JMSL0606AE , IRF1404 , JMTI080P03A , JMTI10N10A , JMTI210P02A , JMTI290N06A , JMTI3005A , JMTI320N10A , JMTI50N06B , JMTI60N04A .
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