JMTI080P03A Datasheet and Replacement
Type Designator: JMTI080P03A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO251-4R
JMTI080P03A substitution
JMTI080P03A Datasheet (PDF)
jmti080p03a.pdf

JMTI080P03A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -30V, I = -60A PWM Applications DS DR
jmti080n02a.pdf

JMTI080N02ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 20V, 50A Load SwitchRDS(ON)
Datasheet: JMSL040SMTL , JMSL040SPG , JMSL0605AGD , JMSL0605AGDQ , JMSL0605PG , JMSL0606AC , JMSL0606AE , JMTI080N02A , IRFP260N , JMTI10N10A , JMTI210P02A , JMTI290N06A , JMTI3005A , JMTI320N10A , JMTI50N06B , JMTI60N04A , JMTK018N03A .
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