JMTI10N10A Datasheet. Specs and Replacement
Type Designator: JMTI10N10A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO251
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JMTI10N10A substitution
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JMTI10N10A datasheet
jmti10n10a.pdf
JMTI10N10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V, 10A Load Switch R ... See More ⇒
Detailed specifications: JMSL040SPG, JMSL0605AGD, JMSL0605AGDQ, JMSL0605PG, JMSL0606AC, JMSL0606AE, JMTI080N02A, JMTI080P03A, IRFB4110, JMTI210P02A, JMTI290N06A, JMTI3005A, JMTI320N10A, JMTI50N06B, JMTI60N04A, JMTK018N03A, JMTK035N04L
Keywords - JMTI10N10A MOSFET specs
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