JMTI50N06B Spec and Replacement
Type Designator: JMTI50N06B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5.1 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO251S
JMTI50N06B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JMTI50N06B Specs
..1. Size:513K jiejie micro
jmti50n06b.pdf
jmti50n06b.pdf
JMTI50N06B Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,50A Load Switch R ... See More ⇒
Detailed specifications: JMSL0606AE , JMTI080N02A , JMTI080P03A , JMTI10N10A , JMTI210P02A , JMTI290N06A , JMTI3005A , JMTI320N10A , IRF3710 , JMTI60N04A , JMTK018N03A , JMTK035N04L , JMTK050P03A , JMTK060N06A , JMTK060P03A , JMTK068N07A , JMTK080P03A .
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