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JMTK068N07A Spec and Replacement


   Type Designator: JMTK068N07A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 51 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
   Package: TO252

 JMTK068N07A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMTK068N07A Specs

 ..1. Size:1276K  jiejie micro
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JMTK068N07A

70V, 51A, 6.1m N-channel Power Trench MOSFET JMTK068N07A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 70 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 51 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.1 mW RDS(ON)_Typ(@VGS=8.0V 6.5 mW Applications Load Switch P... See More ⇒

 8.1. Size:1320K  jiejie micro
 jmtk060p03a.pdf pdf_icon

JMTK068N07A

-30V, -90A, 4.2m P-channel Power Trench MOSFET JMTK060P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS -30 V 100% Vds TESTED VGS(th)_Typ -1.8 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -90 A RDS(ON)_Typ(@VGS=-10V 4.2 mW Pb-free plating RDS(ON)_Typ(@VGS=-4.5V 6.3 mW Applications Load Switc... See More ⇒

 8.2. Size:319K  jiejie micro
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JMTK068N07A

JMTK060N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 120A Load Switch R ... See More ⇒

 9.1. Size:1297K  jiejie micro
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JMTK068N07A

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Detailed specifications: JMTI320N10A , JMTI50N06B , JMTI60N04A , JMTK018N03A , JMTK035N04L , JMTK050P03A , JMTK060N06A , JMTK060P03A , 7N65 , JMTK080P03A , JMTP045N03A , JMTP075N06A , JMTP080N04A , JMTP080N04D , JMTP080P03A , JMTP085P02A , JMTP110N06A .

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