JMTP080N04D Datasheet. Specs and Replacement

Type Designator: JMTP080N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm

Package: SOP8

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JMTP080N04D datasheet

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JMTP080N04D

JMTP080N04D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 40V, 13A Load Switch RDS(ON) ... See More ⇒

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JMTP080N04D

JMTP080N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 15A Load Switch RDS(ON) ... See More ⇒

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JMTP080N04D

JMTP080P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -15A Load Switch RDS(ON) ... See More ⇒

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JMTP080N04D

JMTP085P02A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V =-20V, I =-15A PWM Applications DS D R ... See More ⇒

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Detailed specifications: JMTK050P03A, JMTK060N06A, JMTK060P03A, JMTK068N07A, JMTK080P03A, JMTP045N03A, JMTP075N06A, JMTP080N04A, 2SK3878, JMTP080P03A, JMTP085P02A, JMTP110N06A, JMTP110N06D, JMTP11DN10A, JMTQ025N02A, JMTQ040N03A, JMTQ050N02A

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