JMTP080N04D Datasheet and Replacement
Type Designator: JMTP080N04D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 167 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm
Package: SOP8
JMTP080N04D substitution
JMTP080N04D Datasheet (PDF)
jmtp080n04d.pdf
JMTP080N04DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 40V, 13A Load SwitchRDS(ON)
jmtp080n04a.pdf
JMTP080N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 40V, 15A Load SwitchRDS(ON)
jmtp080p03a.pdf
JMTP080P03ADescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -15A Load SwitchRDS(ON)
jmtp085p02a.pdf
JMTP085P02ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V =-20V, I =-15A PWM ApplicationsDS DR
Datasheet: JMTK050P03A , JMTK060N06A , JMTK060P03A , JMTK068N07A , JMTK080P03A , JMTP045N03A , JMTP075N06A , JMTP080N04A , IRFP260 , JMTP080P03A , JMTP085P02A , JMTP110N06A , JMTP110N06D , JMTP11DN10A , JMTQ025N02A , JMTQ040N03A , JMTQ050N02A .
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MOSFET: JMTQ080P03A | JMTQ075N03D | JMTQ062N04A | JMTQ055N04A | JMTQ050N02A | JMTQ040N03A | JMTQ025N02A | JMTP11DN10A | JMTP110N06D | JMTP110N06A | JMTP085P02A | JMTP080P03A | JMTP080N04D | JMTP080N04A | JMTP075N06A | JMTP045N03A
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