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JMTP085P02A Spec and Replacement


   Type Designator: JMTP085P02A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8

 JMTP085P02A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMTP085P02A Specs

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JMTP085P02A

JMTP085P02A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V =-20V, I =-15A PWM Applications DS D R ... See More ⇒

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JMTP085P02A

JMTP080P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -15A Load Switch RDS(ON) ... See More ⇒

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JMTP085P02A

JMTP080N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 15A Load Switch RDS(ON) ... See More ⇒

 8.3. Size:794K  jiejie micro
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JMTP085P02A

JMTP080N04D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 40V, 13A Load Switch RDS(ON) ... See More ⇒

Detailed specifications: JMTK060P03A , JMTK068N07A , JMTK080P03A , JMTP045N03A , JMTP075N06A , JMTP080N04A , JMTP080N04D , JMTP080P03A , 2N7002 , JMTP110N06A , JMTP110N06D , JMTP11DN10A , JMTQ025N02A , JMTQ040N03A , JMTQ050N02A , JMTQ055N04A , JMTQ062N04A .

History: JMTP080P03A | JMTP110N06A | JMTP110N06D

Keywords - JMTP085P02A MOSFET specs

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