JMTP085P02A Datasheet and Replacement
Type Designator: JMTP085P02A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP8
JMTP085P02A substitution
JMTP085P02A Datasheet (PDF)
jmtp085p02a.pdf
JMTP085P02ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V =-20V, I =-15A PWM ApplicationsDS DR
jmtp080p03a.pdf
JMTP080P03ADescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -15A Load SwitchRDS(ON)
jmtp080n04a.pdf
JMTP080N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 40V, 15A Load SwitchRDS(ON)
jmtp080n04d.pdf
JMTP080N04DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 40V, 13A Load SwitchRDS(ON)
Datasheet: JMTK060P03A , JMTK068N07A , JMTK080P03A , JMTP045N03A , JMTP075N06A , JMTP080N04A , JMTP080N04D , JMTP080P03A , K3569 , JMTP110N06A , JMTP110N06D , JMTP11DN10A , JMTQ025N02A , JMTQ040N03A , JMTQ050N02A , JMTQ055N04A , JMTQ062N04A .
History: JMTP080P03A | HGB058N08SL
Keywords - JMTP085P02A MOSFET datasheet
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History: JMTP080P03A | HGB058N08SL
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