JMTQ080P03A Datasheet and Replacement
Type Designator: JMTQ080P03A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 471 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0074 Ohm
Package: PDFN3X3-8L
JMTQ080P03A substitution
JMTQ080P03A Datasheet (PDF)
jmtq080p03a.pdf
-30V, -50A, 8.1m P-channel Power Trench MOSFETJMTQ080P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS Tested=VDSS -30 V 100% Vds TestedVGS(th)_Typ -1.5 V Halogen-free; RoHS-compliantID(@VGS=-10V) -50 A Pb-free platingRDS(ON)_Typ(@VGS=-10V 5.9 mWRDS(ON)_Typ(@VGS=-4.5V 8.1 mWApplications Load Swi
jmtq055n04a.pdf
JMTQ055N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 70A Load SwitchRDS(ON)
jmtq040n03a.pdf
JMTQ040N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 60A Load SwitchRDS(ON)
jmtq075n03d.pdf
JMTQ075N03DDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 25A Load SwitchRDS(ON)
Datasheet: JMTP110N06D , JMTP11DN10A , JMTQ025N02A , JMTQ040N03A , JMTQ050N02A , JMTQ055N04A , JMTQ062N04A , JMTQ075N03D , IRFB3607 , , , , , , , , .
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MOSFET: JMTQ080P03A | JMTQ075N03D | JMTQ062N04A | JMTQ055N04A | JMTQ050N02A | JMTQ040N03A | JMTQ025N02A | JMTP11DN10A | JMTP110N06D | JMTP110N06A | JMTP085P02A | JMTP080P03A | JMTP080N04D | JMTP080N04A | JMTP075N06A | JMTP045N03A
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