JMTQ080P03A Datasheet. Specs and Replacement
Type Designator: JMTQ080P03A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 471 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0074 Ohm
Package: PDFN3X3-8L
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JMTQ080P03A substitution
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JMTQ080P03A datasheet
jmtq080p03a.pdf
-30V, -50A, 8.1m P-channel Power Trench MOSFET JMTQ080P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested= VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.5 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -50 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 5.9 mW RDS(ON)_Typ(@VGS=-4.5V 8.1 mW Applications Load Swi... See More ⇒
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Detailed specifications: JMTP110N06D, JMTP11DN10A, JMTQ025N02A, JMTQ040N03A, JMTQ050N02A, JMTQ055N04A, JMTQ062N04A, JMTQ075N03D, K4145, JMSL0606AGD, JMSL0606AGQ, JMSL0606AGWQ, JMSL0606AK, JMSL0606AKQ, JMSL0606AP, JMSL0606AU, JMSL0606AUQ
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