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JMSL0606AGWQ Spec and Replacement


   Type Designator: JMSL0606AGWQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 103 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PDFN5X6-8L-W

 JMSL0606AGWQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMSL0606AGWQ Specs

 ..1. Size:330K  jiejie micro
 jmsl0606agwq.pdf pdf_icon

JMSL0606AGWQ

JMSL0606AGWQ 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V) 4.0 m RDS(ON)_Typ (@ VGS = 4.5V) 5.2 m Automated Optica... See More ⇒

 4.1. Size:277K  1
 jmsl0606ag.pdf pdf_icon

JMSL0606AGWQ

JMSL0606AG 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V High Current Capability ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V) 4.0 m 100% UIS Tested, 100% Rg Tested RDS(ON) _Typ(@ VGS = 4.5V) 5.2 m Applications Power Managerment in Telecom., Industrial... See More ⇒

 4.2. Size:284K  jiejie micro
 jmsl0606agd.pdf pdf_icon

JMSL0606AGWQ

JMSL0606AGD 60V 6.4m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 55 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.4 m RDS(ON) (@ VGS = 4.5V) 7.6 m Halogen-free and RoHS-compliant Applications Power Managerment ... See More ⇒

 4.3. Size:410K  jiejie micro
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JMSL0606AGWQ

JMSL0606AGQ 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.0 m RDS(ON)_Typ (@ VGS = 4.5V) 5.2 m Halogen-free and RoHS-compliant AEC-Q101 Q... See More ⇒

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Detailed specifications: JMTQ040N03A , JMTQ050N02A , JMTQ055N04A , JMTQ062N04A , JMTQ075N03D , JMTQ080P03A , JMSL0606AGD , JMSL0606AGQ , 12N60 , JMSL0606AK , JMSL0606AKQ , JMSL0606AP , JMSL0606AU , JMSL0606AUQ , JMSL0606PE , JMSL0606PG , JMSL0606PU .

History: PMV15ENEA

Keywords - JMSL0606AGWQ MOSFET specs

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