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JMTK100N02A Spec and Replacement


   Type Designator: JMTK100N02A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
   Package: TO252

 JMTK100N02A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMTK100N02A Specs

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JMTK100N02A

JMTK100N02A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 30A Load Switch RDS(ON) ... See More ⇒

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JMTK100N02A

JMTK100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 40A Load Switch RDS(ON) ... See More ⇒

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JMTK100N02A

-30V,-55A, 8.9m P-channel Power Trench MOSFET JMTK100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -55 A Applications RDS(ON)_Typ(@VGS=-10V 6.1 mW Load Switch RDS(ON)_Typ(@VGS=-4.5V 8.9 mW PWM Applica... See More ⇒

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JMTK100N02A

JMTK10N10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V, 10A Load Switch R ... See More ⇒

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Detailed specifications: JMSL10130AP , JMSL10130APD , JMSL10130AUD , JMSL10130AY , JMSL10130PUD , JMSL1013AGD , JMSL1018AG , JMTK085P04A , P60NF06 , JMTK100N03A , JMTK100P03A , JMTK10N10A , JMTK3006B , JMTK3006C , JMTK3006D , JMTK3006E , JMTK320N10A .

Keywords - JMTK100N02A MOSFET specs

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