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JMTK50P03A Spec and Replacement


   Type Designator: JMTK50P03A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 306 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO252

 JMTK50P03A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMTK50P03A Specs

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JMTK50P03A

JMTK50P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -50A Load Switch RDS(ON) ... See More ⇒

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JMTK50P03A

JMTK50P02A Description JMT P-channel MOSFET Features Application V =-20V, I =-60A PWM Applications DS D R ... See More ⇒

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JMTK50P03A

JMTK50N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 50A Load Switch RDS(ON) ... See More ⇒

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JMTK50P03A

100V, 20A, 36m N-channel Power Trench MOSFET JMTK500N10A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 20 A RDS(ON)_Typ(@VGS=10V 34 mW Applications RDS(ON)_Typ(@VGS=4.5V 36 mW Load Switch PWM Application Po... See More ⇒

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Detailed specifications: JMSL0611PG , JMSL0611PGD , JMSL0611PP , JMTK480N06A , JMTK500N10A , JMTK50N03A , JMTK50N06B , JMTK50P02A , IRLZ44N , JMTK58N06B , JMTK60N04B , JMTK70N07A , JMTK75N02A , JMTK80N06A , JMTK90N02A , JMTQ100N03A , JMTQ100N03D .

History: PZC010BL

Keywords - JMTK50P03A MOSFET specs

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