JMTK60N04B Spec and Replacement
Type Designator: JMTK60N04B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 167 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO252
JMTK60N04B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JMTK60N04B Specs
jmtk60n04b.pdf
JMTK60N04B Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 60A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: JMSL0611PP , JMTK480N06A , JMTK500N10A , JMTK50N03A , JMTK50N06B , JMTK50P02A , JMTK50P03A , JMTK58N06B , IRF640N , JMTK70N07A , JMTK75N02A , JMTK80N06A , JMTK90N02A , JMTQ100N03A , JMTQ100N03D , JMTQ100N04A , JMTQ100P03A .
History: PZ5203EMAA | FQI27N25
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: PZ5203EMAA | FQI27N25
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