JMSL1018PG Datasheet. Specs and Replacement

Type Designator: JMSL1018PG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 329 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0167 Ohm

Package: PDFN5X6-8L

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JMSL1018PG substitution

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JMSL1018PG datasheet

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JMSL1018PG

100V, 54A, 18.2m N-channel Power SGT MOSFET JMSL1018PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 54 A Pb-free plating RDS(ON)_Typ(@VGS=10V 12.8 mW RDS(ON)_Typ(@VGS=4.5V 18.2 mW Applications Load Switch ... See More ⇒

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JMSL1018PG

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JMSL1018PG

100V, 27A, 19m Dual N-channel Power SGT MOSFET JMSL1018PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 27 A RDS(ON)_Typ(@VGS=10V 14 mW Applications RDS(ON)_Typ(@VGS=4.5V 19 mW Load Switch PWM Application ... See More ⇒

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JMSL1018PG

100V, 39A, 18m N-channel Power SGT MOSFET JMSL1018PKQ Product Summary Features Low ON-resistance RDS(ON) Parameters Value Unit Excellent Gate Charge VDSS 100 V VGS(th)_Typ 100% UIS Tested 1.6 V ID(@VGS=10V) 39 A 100% Vds Tested RDS(ON)_Typ(@VGS=10V 13 mW Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=6.0V 15 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V... See More ⇒

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Detailed specifications: JMSL0612PP, JMSL0612PPD, JMSL0612PU, JMSL0613APD, JMSL1018AK, JMSL1018AKQ, JMSL1018AP, JMSL1018AUQ, AON6380, JMSL1018PGD, JMSL1018PGQ, JMSL1018PK, JMSL1018PKQ, JMSL1020AGDQ, JMSL1020PGDQ, JMSL1023AY, JMSL10380G

Keywords - JMSL1018PG MOSFET specs

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