All MOSFET. SLB60R105E7D Datasheet

 

SLB60R105E7D Datasheet and Replacement


   Type Designator: SLB60R105E7D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 155 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO263
 

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SLB60R105E7D Datasheet (PDF)

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SLB60R105E7D

SLB60R105E7D600V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 29A, 600V, RDS(on),Typ = 89mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 61nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin

Datasheet: JVC085T , JVC103K , JVC103T , JVC105E , JVC113T , JVC502E , SLA08N10G , SLA10N03T , IRFZ46N , SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB .

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