SLB60R105E7D PDF and Equivalents Search

 

SLB60R105E7D Specs and Replacement

Type Designator: SLB60R105E7D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 155 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO263

SLB60R105E7D substitution

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SLB60R105E7D datasheet

 ..1. Size:3001K  maple semi
 slb60r105e7d.pdf pdf_icon

SLB60R105E7D

SLB60R105E7D 600V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 29A, 600V, RDS(on),Typ = 89m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 61nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin... See More ⇒

Detailed specifications: JVC085T, JVC103K, JVC103T, JVC105E, JVC113T, JVC502E, SLA08N10G, SLA10N03T, IRFB31N20D, SLB65R380E7C, SLC013RN06G, SLD07RN10G, SLD10N65U, SLD110N02TB, SLD120N03TB, SLD140N03TB, SLD40N03TB

Keywords - SLB60R105E7D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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