SLB65R380E7C PDF and Equivalents Search

 

SLB65R380E7C Specs and Replacement

Type Designator: SLB65R380E7C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 102.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO263

SLB65R380E7C substitution

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SLB65R380E7C datasheet

 ..1. Size:2968K  maple semi
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SLB65R380E7C

SLB65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

Detailed specifications: JVC103K, JVC103T, JVC105E, JVC113T, JVC502E, SLA08N10G, SLA10N03T, SLB60R105E7D, STP65NF06, SLC013RN06G, SLD07RN10G, SLD10N65U, SLD110N02TB, SLD120N03TB, SLD140N03TB, SLD40N03TB, SLD60N04TB

Keywords - SLB65R380E7C MOSFET specs

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