All MOSFET. SLB65R380E7C Datasheet

 

SLB65R380E7C Datasheet and Replacement


   Type Designator: SLB65R380E7C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 102.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO263
 

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SLB65R380E7C Datasheet (PDF)

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SLB65R380E7C

SLB65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

Datasheet: JVC103K , JVC103T , JVC105E , JVC113T , JVC502E , SLA08N10G , SLA10N03T , SLB60R105E7D , STP65NF06 , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB , SLD60N04TB .

History: SLA08N10G | 2SK2876-01MR | BUK436-200A | SLU4N65U | UT3N06G-AE3

Keywords - SLB65R380E7C MOSFET datasheet

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