All MOSFET. SLC013RN06G Datasheet

 

SLC013RN06G Datasheet and Replacement


   Type Designator: SLC013RN06G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 155 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 1902 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00155 Ohm
   Package: TOLL
 

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SLC013RN06G Datasheet (PDF)

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SLC013RN06G

SLC013RN06G60V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 300A*, 60V, RDS(on),typ =1.3mShielding Gate MOSFET technology This advanced technol- Low gate charge (Qg,typ = 94nC)ogy has been especially tailored to minimize on-state resis- Fast switchingtance, provide superior switching performance, and withstand

Datasheet: JVC103T , JVC105E , JVC113T , JVC502E , SLA08N10G , SLA10N03T , SLB60R105E7D , SLB65R380E7C , IRF1405 , SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB , SLD60N04TB , SLD65R1K2E7 .

History: UT3N06G-AE3 | 2SK2876-01MR | BUK436-200A

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