All MOSFET. SLD07RN10G Datasheet

 

SLD07RN10G Datasheet and Replacement


   Type Designator: SLD07RN10G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 144 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 155 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 1035 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO252
 

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SLD07RN10G Datasheet (PDF)

 ..1. Size:5106K  maple semi
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SLD07RN10G

SLD07RN10G100V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 95A, 100V, RDS(on),typ =7.2mShielding Gate MOSFET technology This advanced technol- Low gate charge (Qg,typ = 33nC)ogy has been especially tailored to minimize on-state resis- Fast switchingtance, provide superior switching performance, and withstand

Datasheet: JVC105E , JVC113T , JVC502E , SLA08N10G , SLA10N03T , SLB60R105E7D , SLB65R380E7C , SLC013RN06G , IRF830 , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB , SLD60N04TB , SLD65R1K2E7 , 24N6LG .

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