SLD07RN10G PDF and Equivalents Search

 

SLD07RN10G Specs and Replacement

Type Designator: SLD07RN10G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 144 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 155 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 1035 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO252

SLD07RN10G substitution

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SLD07RN10G datasheet

 ..1. Size:5106K  maple semi
 sld07rn10g.pdf pdf_icon

SLD07RN10G

SLD07RN10G 100V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 95A, 100V, RDS(on),typ =7.2m Shielding Gate MOSFET technology This advanced technol- Low gate charge (Qg,typ = 33nC) ogy has been especially tailored to minimize on-state resis- Fast switching tance, provide superior switching performance, and withstand ... See More ⇒

Detailed specifications: JVC105E, JVC113T, JVC502E, SLA08N10G, SLA10N03T, SLB60R105E7D, SLB65R380E7C, SLC013RN06G, 7N60, SLD10N65U, SLD110N02TB, SLD120N03TB, SLD140N03TB, SLD40N03TB, SLD60N04TB, SLD65R1K2E7, 24N6LG

Keywords - SLD07RN10G MOSFET specs

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