All MOSFET. SLD120N03TB Datasheet

 

SLD120N03TB Datasheet and Replacement


   Type Designator: SLD120N03TB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 111 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO252
 

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SLD120N03TB Datasheet (PDF)

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SLD120N03TB

SLD120N03TB30V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 111A, 30V, RDS(on),Typ = 2.5mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 65nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in

Datasheet: SLA08N10G , SLA10N03T , SLB60R105E7D , SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB , IRF1405 , SLD140N03TB , SLD40N03TB , SLD60N04TB , SLD65R1K2E7 , , , , .

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