All MOSFET. SLD40N03TB Datasheet

 

SLD40N03TB Datasheet and Replacement


   Type Designator: SLD40N03TB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 134 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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SLD40N03TB Datasheet (PDF)

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SLD40N03TB

SLD40N03TB30V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 48.6A, 30V, RDS(on),Typ = 6mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 24nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in t

Datasheet: SLB60R105E7D , SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , AON7403 , SLD60N04TB , SLD65R1K2E7 , , , , , , .

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