All MOSFET. SLF4N65SV Datasheet

 

SLF4N65SV Datasheet and Replacement


   Type Designator: SLF4N65SV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 155 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO220F
 

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SLF4N65SV Datasheet (PDF)

 ..1. Size:2070K  maple semi
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SLF4N65SV

SLF4N65SV650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 4A*, 650V, RDS(on),typ =2.38planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 13nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

Datasheet: SLD120N03TB , SLD140N03TB , SLD40N03TB , SLD60N04TB , SLD65R1K2E7 , 24N6LG , 2SK737 , STF4N90K5 , MMIS60R580P , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , SLF65R600E7C , SLF70R280E7C , SLF70R380E7C , SLF80R830GT .

History: WMO80R480S | 2SK1380 | RU60C20R5 | SLD120N03TB | RU60D5H | RU60E16L

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