SLF4N65SV Specs and Replacement
Type Designator: SLF4N65SV
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 155 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO220F
SLF4N65SV substitution
- MOSFET ⓘ Cross-Reference Search
SLF4N65SV datasheet
slf4n65sv.pdf
SLF4N65SV 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 4A*, 650V, RDS(on),typ =2.38 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 13nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en- ... See More ⇒
Detailed specifications: SLD120N03TB, SLD140N03TB, SLD40N03TB, SLD60N04TB, SLD65R1K2E7, 24N6LG, 2SK737, STF4N90K5, MMIS60R580P, SLF65R180E7C, SLF65R1K2E7, SLF65R280E7C, SLF65R380E7C, SLF65R600E7C, SLF70R280E7C, SLF70R380E7C, SLF80R830GT
Keywords - SLF4N65SV MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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