DMG6402LDM Specs and Replacement

Type Designator: DMG6402LDM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 386 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOT26

DMG6402LDM substitution

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DMG6402LDM datasheet

 ..1. Size:156K  diodes
 dmg6402ldm.pdf pdf_icon

DMG6402LDM

DMG6402LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low RDS(ON) Case SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminals Finish - Matte Tin Solderable per MIL-S... See More ⇒

 6.1. Size:221K  diodes
 dmg6402lvt.pdf pdf_icon

DMG6402LDM

DMG6402LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 30m @ VGS = 10V 6A 30V Totally Lead-Free Finish; RoHS compliant (Note 1 & 2) 42m @ VGS = 4.5V 5A Halogen and Antimony Free. Green Device (Note 3) Qualified... See More ⇒

Detailed specifications: DMG4466SSSL, DMG4468LFG, DMG4468LK3, DMG4496SSS, DMG4800LFG, DMG4800LK3, DMG4800LSD, DMG4822SSD, SPP20N60C3, DMG8880LK3, DMG8880LSS, DMN100, DMN2600UFB, DMN3005LK3, DMN3007LSS, DMN3010LSS, DMN3020LK3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.