All MOSFET. DMG6402LDM Datasheet

 

DMG6402LDM Datasheet and Replacement


   Type Designator: DMG6402LDM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Cossⓘ - Output Capacitance: 386 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOT26
 

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DMG6402LDM Datasheet (PDF)

 ..1. Size:156K  diodes
 dmg6402ldm.pdf pdf_icon

DMG6402LDM

DMG6402LDMN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON) Case: SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish - Matte Tin Solderable per MIL-S

 6.1. Size:221K  diodes
 dmg6402lvt.pdf pdf_icon

DMG6402LDM

DMG6402LVT30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 30m @ VGS = 10V 6A 30V Totally Lead-Free Finish; RoHS compliant (Note 1 & 2) 42m @ VGS = 4.5V 5A Halogen and Antimony Free. Green Device (Note 3) Qualified

Datasheet: DMG4466SSSL , DMG4468LFG , DMG4468LK3 , DMG4496SSS , DMG4800LFG , DMG4800LK3 , DMG4800LSD , DMG4822SSD , AON7410 , DMG8880LK3 , DMG8880LSS , DMN100 , DMN2600UFB , DMN3005LK3 , DMN3007LSS , DMN3010LSS , DMN3020LK3 .

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