All MOSFET. SLP730S Datasheet

 

SLP730S Datasheet and Replacement


   Type Designator: SLP730S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 99 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220
 

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SLP730S Datasheet (PDF)

 ..1. Size:4345K  maple semi
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SLP730S

SLP730S400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 5.9A, 400V, RDS(on),typ =0.96planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 8nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

Datasheet: SLF80R830GT , SLF8N65SV , SLM120N06G , SLM150N04G , SLM160N04G , SLP65R180E7C , SLP65R1K2E7 , SLP65R380E7C , IRFZ44 , SLT65R180E7C , SLT70R180E7C , SLU4N65U , SLD65R280E7C , SLD65R380E7C , SLD65R600E7C , SLD80N02TB , SLD8N50UD .

History: SLD65R600E7C | NDB4050L | CJQ4824 | WPM2087

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