All MOSFET. SLT70R180E7C Datasheet

 

SLT70R180E7C Datasheet and Replacement


   Type Designator: SLT70R180E7C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: PTO252
 

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SLT70R180E7C Datasheet (PDF)

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SLT70R180E7C

SLT70R180E7C700V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 22A, 700V, RDS(on),Typ = 150mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

Datasheet: SLM120N06G , SLM150N04G , SLM160N04G , SLP65R180E7C , SLP65R1K2E7 , SLP65R380E7C , SLP730S , SLT65R180E7C , IRF1404 , SLU4N65U , , , , , , , .

History: MMQ60R115PTH

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