All MOSFET. SLD8N50UD Datasheet

 

SLD8N50UD Datasheet and Replacement


   Type Designator: SLD8N50UD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.96 Ohm
   Package: TO252
 

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SLD8N50UD Datasheet (PDF)

 ..1. Size:5144K  maple semi
 sld8n50ud.pdf pdf_icon

SLD8N50UD

SLD8N50UD500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 8A, 500V, RDS(on),typ =0.82planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 20nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

 9.1. Size:4841K  maple semi
 sld8n65sv.pdf pdf_icon

SLD8N50UD

SLD8N65SV650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 8A, 650V, RDS(on),typ =1.3planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 20nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

Datasheet: SLP730S , SLT65R180E7C , SLT70R180E7C , SLU4N65U , SLD65R280E7C , SLD65R380E7C , SLD65R600E7C , SLD80N02TB , IRF3710 , SLD8N65SV , SLD90N02TB , SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , SLF10N65SV , SLF12N65SV , SLF16N65S .

History: FDPF18N20FT | IRF2807ZL

Keywords - SLD8N50UD MOSFET datasheet

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