SLD8N50UD PDF and Equivalents Search

 

SLD8N50UD Specs and Replacement

Type Designator: SLD8N50UD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 101 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.96 Ohm

Package: TO252

SLD8N50UD substitution

- MOSFET ⓘ Cross-Reference Search

 

SLD8N50UD datasheet

 ..1. Size:5144K  maple semi
 sld8n50ud.pdf pdf_icon

SLD8N50UD

... See More ⇒

 9.1. Size:4841K  maple semi
 sld8n65sv.pdf pdf_icon

SLD8N50UD

... See More ⇒

Detailed specifications: SLP730S, SLT65R180E7C, SLT70R180E7C, SLU4N65U, SLD65R280E7C, SLD65R380E7C, SLD65R600E7C, SLD80N02TB, IRFB4227, SLD8N65SV, SLD90N02TB, SLD90N03TB, SLD95R3K2GTZ, SLE65R1K2E7, SLF10N65SV, SLF12N65SV, SLF16N65S

Keywords - SLD8N50UD MOSFET specs

 SLD8N50UD cross reference

 SLD8N50UD equivalent finder

 SLD8N50UD pdf lookup

 SLD8N50UD substitution

 SLD8N50UD replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.