All MOSFET. SLD90N02TB Datasheet

 

SLD90N02TB Datasheet and Replacement


   Type Designator: SLD90N02TB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 89.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO252
 

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SLD90N02TB Datasheet (PDF)

 ..1. Size:4807K  maple semi
 sld90n02tb.pdf pdf_icon

SLD90N02TB

SLD90N02TB20V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 89.3A, 20V, RDS(on),Typ = 2.8mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 38nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in

 7.1. Size:2430K  maple semi
 sld90n03tb.pdf pdf_icon

SLD90N02TB

SLD90N03TB30V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks - 99A 1), 30V, RDS(on)typ = 3.6m@VGS = 10 V RDS(on)typ = 6.5m@VGS = 4.5Vadvanced TRENCH technology.This advanced technology has been especially tailored to minimize - Very Low On-resistance RDS(ON)- Low Crssconduction loss, provide superior switching performance, and-

Datasheet: SLT70R180E7C , SLU4N65U , SLD65R280E7C , SLD65R380E7C , SLD65R600E7C , SLD80N02TB , SLD8N50UD , SLD8N65SV , 7N65 , SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , SLF10N65SV , SLF12N65SV , SLF16N65S , SLF95R760GTZ , SLH10RN20T .

History: FIR10N20LG

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