All MOSFET. SLD95R3K2GTZ Datasheet

 

SLD95R3K2GTZ Datasheet and Replacement


   Type Designator: SLD95R3K2GTZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 7.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO252
 

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SLD95R3K2GTZ Datasheet (PDF)

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SLD95R3K2GTZ

SLD95R3K2GTZ950V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 3.5A, 950V, RDS(on),Typ = 2.8vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 9nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin

Datasheet: SLD65R280E7C , SLD65R380E7C , SLD65R600E7C , SLD80N02TB , SLD8N50UD , SLD8N65SV , SLD90N02TB , SLD90N03TB , IRFP250N , SLE65R1K2E7 , , , , , , , .

History: MDF12N50BTH | FDD3860 | FQPF8N90C | IRCP240

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