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SLD95R3K2GTZ Specs and Replacement

Type Designator: SLD95R3K2GTZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 7.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm

Package: TO252

SLD95R3K2GTZ substitution

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SLD95R3K2GTZ datasheet

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 sld95r3k2gtz.pdf pdf_icon

SLD95R3K2GTZ

SLD95R3K2GTZ 950V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 3.5A, 950V, RDS(on),Typ = 2.8 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 9nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin... See More ⇒

Detailed specifications: SLD65R280E7C, SLD65R380E7C, SLD65R600E7C, SLD80N02TB, SLD8N50UD, SLD8N65SV, SLD90N02TB, SLD90N03TB, IRFB4115, SLE65R1K2E7, SLF10N65SV, SLF12N65SV, SLF16N65S, SLF95R760GTZ, SLH10RN20T, SLH60R043E7D, SLH60R075GTDI

Keywords - SLD95R3K2GTZ MOSFET specs

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