SLF95R760GTZ PDF and Equivalents Search

 

SLF95R760GTZ Specs and Replacement

Type Designator: SLF95R760GTZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 126 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.9 A

Tj ⓘ - Maximum Junction Temperature: 155 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm

Package: TO220F

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SLF95R760GTZ datasheet

 ..1. Size:2580K  maple semi
 slf95r760gtz.pdf pdf_icon

SLF95R760GTZ

SLF95R760GTZ 950V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 8.9A*, 950V, RDS(on),Typ = 670m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 23nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switc... See More ⇒

Detailed specifications: SLD8N65SV, SLD90N02TB, SLD90N03TB, SLD95R3K2GTZ, SLE65R1K2E7, SLF10N65SV, SLF12N65SV, SLF16N65S, IRFP250N, SLH10RN20T, SLH60R043E7D, SLH60R075GTDI, SLH65R180E7C, SLH95R130GTZ, SLI13N50C, MD100N20, MD20N50

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