All MOSFET. SLF95R760GTZ Datasheet

 

SLF95R760GTZ Datasheet and Replacement


   Type Designator: SLF95R760GTZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 126 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.9 A
   Tj ⓘ - Maximum Junction Temperature: 155 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm
   Package: TO220F
 

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SLF95R760GTZ Datasheet (PDF)

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SLF95R760GTZ

SLF95R760GTZ950V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 8.9A*, 950V, RDS(on),Typ = 670mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 23nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switc

Datasheet: SLD8N65SV , SLD90N02TB , SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , SLF10N65SV , SLF12N65SV , SLF16N65S , STP75NF75 , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 , MD20N50 .

History: FIR10N20LG

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