All MOSFET. SLH65R180E7C Datasheet

 

SLH65R180E7C Datasheet and Replacement


   Type Designator: SLH65R180E7C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO247
 

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SLH65R180E7C Datasheet (PDF)

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SLH65R180E7C

SLH65R180E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 22A, 650V, RDS(on),Typ = 150mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

Datasheet: SLE65R1K2E7 , SLF10N65SV , SLF12N65SV , SLF16N65S , SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , 8205A , SLH95R130GTZ , SLI13N50C , MD100N20 , MD20N50 , MD25N50 , MD50N20 , MD70N10 , MDT30P10D .

History: BLF542 | SM4028NSU | SIHB22N65E | FCH110N65F | MDF7N50BTH | BLF3G21-6 | H5N3008P

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