SLH65R180E7C PDF and Equivalents Search

 

SLH65R180E7C Specs and Replacement

Type Designator: SLH65R180E7C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO247

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SLH65R180E7C datasheet

 ..1. Size:6340K  maple semi
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SLH65R180E7C

SLH65R180E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 22A, 650V, RDS(on),Typ = 150m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

Detailed specifications: SLE65R1K2E7, SLF10N65SV, SLF12N65SV, SLF16N65S, SLF95R760GTZ, SLH10RN20T, SLH60R043E7D, SLH60R075GTDI, 2SK3878, SLH95R130GTZ, SLI13N50C, MD100N20, MD20N50, MD25N50, MD50N20, MD70N10, MDT30P10D

Keywords - SLH65R180E7C MOSFET specs

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