SLH95R130GTZ PDF and Equivalents Search

 

SLH95R130GTZ Specs and Replacement

Type Designator: SLH95R130GTZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: TO247

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SLH95R130GTZ datasheet

 ..1. Size:6496K  maple semi
 slh95r130gtz.pdf pdf_icon

SLH95R130GTZ

SLH95R130GTZ 950V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 34.9A, 950V, RDS(on),Typ = 110m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 110nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior swit... See More ⇒

Detailed specifications: SLF10N65SV, SLF12N65SV, SLF16N65S, SLF95R760GTZ, SLH10RN20T, SLH60R043E7D, SLH60R075GTDI, SLH65R180E7C, STP75NF75, SLI13N50C, MD100N20, MD20N50, MD25N50, MD50N20, MD70N10, MDT30P10D, MDT4N65

Keywords - SLH95R130GTZ MOSFET specs

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