All MOSFET. SLH95R130GTZ Datasheet

 

SLH95R130GTZ Datasheet and Replacement


   Type Designator: SLH95R130GTZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: TO247
 

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SLH95R130GTZ Datasheet (PDF)

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SLH95R130GTZ

SLH95R130GTZ950V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 34.9A, 950V, RDS(on),Typ = 110mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 110nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior swit

Datasheet: SLF10N65SV , SLF12N65SV , SLF16N65S , SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SKD502T , SLI13N50C , MD100N20 , MD20N50 , MD25N50 , MD50N20 , MD70N10 , MDT30P10D , MDT4N65 .

History: FDM40R120AN4G | SLH60R043E7D | IXUV170N075 | IXFX90N30 | MDP2N60TH | IXFK52N30Q | IRFP054PBF

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