MD100N20 PDF and Equivalents Search

 

MD100N20 Specs and Replacement

Type Designator: MD100N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 968 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO247

MD100N20 substitution

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MD100N20 datasheet

 ..1. Size:775K  cn minos
 md100n20.pdf pdf_icon

MD100N20

Description MD100N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, High speed switching and general purpose application General Features V =200V,I = 100A RDS(ON) ... See More ⇒

 9.1. Size:1241K  magnachip
 mpmd100b120rh.pdf pdf_icon

MD100N20

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type Packa... See More ⇒

Detailed specifications: SLF16N65S, SLF95R760GTZ, SLH10RN20T, SLH60R043E7D, SLH60R075GTDI, SLH65R180E7C, SLH95R130GTZ, SLI13N50C, IRF9540N, MD20N50, MD25N50, MD50N20, MD70N10, MDT30P10D, MDT4N65, MPF10N65, MPG08N68P

Keywords - MD100N20 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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