All MOSFET. MD100N20 Datasheet

 

MD100N20 Datasheet and Replacement


   Type Designator: MD100N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 968 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO247
 

 MD100N20 substitution

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MD100N20 Datasheet (PDF)

 ..1. Size:775K  cn minos
 md100n20.pdf pdf_icon

MD100N20

DescriptionMD100N20 the silicon N-channel Enhanced MOSFETs, isobtained by advanced MOSFET technology which reduce theconduction loss, improve switching performance and enhancethe avalanche energy. The transistor is suitable device for SMPS,High speed switching and general purpose applicationGeneral Features V =200V,I = 100A RDS(ON)

 9.1. Size:1241K  magnachip
 mpmd100b120rh.pdf pdf_icon

MD100N20

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss : VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Type Packa

Datasheet: SLF16N65S , SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , K4145 , MD20N50 , MD25N50 , MD50N20 , MD70N10 , MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P .

History: IRF7416QPBF | SLH60R043E7D | IXFP7N100P | IRF540S | MD50N20 | STH12N60FI | TMP2N60AZ

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