All MOSFET. MPG08N68S Datasheet

 

MPG08N68S Datasheet and Replacement


   Type Designator: MPG08N68S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263
 

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MPG08N68S Datasheet (PDF)

 ..1. Size:612K  cn minos
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MPG08N68S

68V N-Channel Power MOSFETDESCRIPTIONThe MPG08N68 uses advanced trench technologyto provide excellent R , low gate charge. It canDS(ON)be used in a wide variety of applications.KEY CHARACTERISTICSSchematic diagram V = 68V,I = 100ADS D R

Datasheet: MD20N50 , MD25N50 , MD50N20 , MD70N10 , MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , IRFB3607 , MPG120N06P , MPG120N06S , MPG150N10P , MPG150N10S , MPT035N08P , MPT035N08S , , .

History: TPC8053-H

Keywords - MPG08N68S MOSFET datasheet

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