MPG08N68S PDF and Equivalents Search

 

MPG08N68S Specs and Replacement

Type Designator: MPG08N68S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO263

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MPG08N68S datasheet

 ..1. Size:612K  cn minos
 mpg08n68p mpg08n68s.pdf pdf_icon

MPG08N68S

68V N-Channel Power MOSFET DESCRIPTION The MPG08N68 uses advanced trench technology to provide excellent R , low gate charge. It can DS(ON) be used in a wide variety of applications. KEY CHARACTERISTICS Schematic diagram V = 68V,I = 100A DS D R ... See More ⇒

 ..2. Size:612K  cn minos
 mpg08n68s mpg08n68p.pdf pdf_icon

MPG08N68S

68V N-Channel Power MOSFET DESCRIPTION The MPG08N68 uses advanced trench technology to provide excellent R , low gate charge. It can DS(ON) be used in a wide variety of applications. KEY CHARACTERISTICS Schematic diagram V = 68V,I = 100A DS D R ... See More ⇒

Detailed specifications: MD20N50, MD25N50, MD50N20, MD70N10, MDT30P10D, MDT4N65, MPF10N65, MPG08N68P, K4145, MPG120N06P, MPG120N06S, MPG150N10P, MPG150N10S, MPT035N08P, MPT035N08S, FTP06N06N, MD40N50

Keywords - MPG08N68S MOSFET specs

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