MPG120N06S Datasheet and Replacement
Type Designator: MPG120N06S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO263
MPG120N06S substitution
MPG120N06S Datasheet (PDF)
mpg120n06p mpg120n06s.pdf

60V N-Channel Power MOSFETDESCRIPTIONThe MPG120N06 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.KEY CHARACTERISTICS V = 60V,I =120ADS DR
Datasheet: MD50N20 , MD70N10 , MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S , MPG120N06P , 5N60 , MPG150N10P , MPG150N10S , MPT035N08P , MPT035N08S , FTP06N06N , MD40N50 , MD50N50 , MDT35P10D .
History: FDS6990AS | SSF3055 | AON5820 | F6F70HVX2 | PDMN66D0LDW | AON2800 | 2SK629
Keywords - MPG120N06S MOSFET datasheet
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History: FDS6990AS | SSF3055 | AON5820 | F6F70HVX2 | PDMN66D0LDW | AON2800 | 2SK629



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