MPG150N10S Datasheet and Replacement
Type Designator: MPG150N10S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 211 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 590 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO263
MPG150N10S substitution
MPG150N10S Datasheet (PDF)
mpg150n10p mpg150n10s.pdf

100V N-Channel Power MOSFETDESCRIPTIONThe MPG150N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be used in aDS(ON)wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 150A R
Datasheet: MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S , MPG120N06P , MPG120N06S , MPG150N10P , IRF4905 , MPT035N08P , MPT035N08S , FTP06N06N , MD40N50 , MD50N50 , MDT35P10D , MDT40P10D , MDT80N06D .
History: OSG60R2K8AF | FDMS86252 | FDS6984AS | BLS6G3135-20 | SWP7N60D | AO8830 | AS2306
Keywords - MPG150N10S MOSFET datasheet
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History: OSG60R2K8AF | FDMS86252 | FDS6984AS | BLS6G3135-20 | SWP7N60D | AO8830 | AS2306



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