MPG150N10S PDF and Equivalents Search

 

MPG150N10S Specs and Replacement

Type Designator: MPG150N10S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 211 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO263

MPG150N10S substitution

- MOSFET ⓘ Cross-Reference Search

 

MPG150N10S datasheet

 ..1. Size:1048K  cn minos
 mpg150n10p mpg150n10s.pdf pdf_icon

MPG150N10S

100V N-Channel Power MOSFET DESCRIPTION The MPG150N10 uses advanced trench technology to provide excellent R , low gate charge. It can be used in a DS(ON) wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 150A R ... See More ⇒

Detailed specifications: MDT30P10D, MDT4N65, MPF10N65, MPG08N68P, MPG08N68S, MPG120N06P, MPG120N06S, MPG150N10P, 5N65, MPT035N08P, MPT035N08S, FTP06N06N, MD40N50, MD50N50, MDT35P10D, MDT40P10D, MDT80N06D

Keywords - MPG150N10S MOSFET specs

 MPG150N10S cross reference

 MPG150N10S equivalent finder

 MPG150N10S pdf lookup

 MPG150N10S substitution

 MPG150N10S replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.