All MOSFET. MPG150N10S Datasheet

 

MPG150N10S Datasheet and Replacement


   Type Designator: MPG150N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 211 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263
 

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MPG150N10S Datasheet (PDF)

 ..1. Size:1048K  cn minos
 mpg150n10p mpg150n10s.pdf pdf_icon

MPG150N10S

100V N-Channel Power MOSFETDESCRIPTIONThe MPG150N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be used in aDS(ON)wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 150A R

Datasheet: MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S , MPG120N06P , MPG120N06S , MPG150N10P , 4435 , MPT035N08P , MPT035N08S , , , , , , .

History: MPG150N10P

Keywords - MPG150N10S MOSFET datasheet

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